Formation of Interfacial Layers in LaAlO3/Silicon during Film Deposition

We have studied the interracial reactions between amorphous LaAlO3 thin films and Si substrates, using high- resolution transmission electron microscopy and x-ray photoelectron spectroscopy. It has been shown that the interracial layer between LaAlO3 film and Si substrate chemical states show that the ratio of La 4d3/2 to Al 2p is SiLaxAlyOz. The depth distributions of La, Si and Al of the interfacial layer remains unchanged with the depth compared to that of the LaAlO3 film. Moreover, the Si content, in the interracial layer gradually decreases with increasing thickness of the interracial layer. These results strongly suggest that the Al element is not deficient in the interracial layer, as previously believed, and the formation of a SiLaxAlyOz interracial layer is mainly due to the diffusion of Si from the substrate during the LaAlO3 film deposition. With the understanding of the interracial layer formation, ones can control the interface characteristics to ensure the desired performances of devices using high-k oxides as gate dielectrics.     

InxGa1-xAs-GaAs应变层量子阱结构的流体静压光荧光研究

本文报道了对分子束外延(MBE)生长的In_0.25Ga_0.75As-GaAs应变层量子阱结构在77K下的压力光荧光(PL)研究的结果。流体静压力从0到50kbar.,给出了In_0.25Ga_0.75As-GaAs应变层量子阱的Γ谷压力系数,实验观察到了量子阱中能级与势垒GaAs中X谷的能级交叉。通过对其压力行为的分析,给出了In_0.25Ga_0.75As-GaAs异质结的导带与价带跃变比:Q_c=△E_c:△E_v=0.68:0.32。对(InGa)As-GaAs应变量子阱常压下的理论分析与实验符合很好。本文也对Al_0.3Ga_0.70As-GaAs量子阱进行了讨论。 关键词：     

关于矩阵和算子迹的一组不等式

给出关于半正定矩阵迹和正算子迹的一组不等式,得到与邱贤忠关于实数的不等式的类似结果.     

LD Pump Single-Longitudinal-Mode Nd：GdVO4/RTP Solid-State Green Laser

The single-longitudinal-mode Nd：GdVO4/RTiOPO4 （RTP） solid-state Green laser operation of a laser-diode （LD） end-pumped laser is realized by multi-cavities and a Brewster plate. The LD-pumped single-frequency green laser has been demonstrated by optimizing several parameters and a cavity length, with precise temperature controlling of Nd：GdV04, RTP and laser diode. When the incident pump power is 2 W at 808.4 nm, a single-frequency cw green laser at 532nm with output 210 m W is obtained, the optical-to-optical conversion efficiency is up to 10.5%.     

Relativistic Electromagnetic Solitary Wave in a Cylindrical Magnetized Plasma

In the presence of an applied static and uniform magnetic field, a cylindrical Kadomtsev-Petviashivili equation is derived for a relativistic electromagnetic solitary wave propagating in collisionless plasma consisting electrons, positrons, and ions in the case of weak relativistic limit. This equation is solved in a stationary frame to obtain explicit expression for the velocity, amplitude and width of solitons. The amplitude of the solitary wave has a maximum value at a critical αc of the ratio of the ion equilibrium density to the electron one, and it increases as the applied magnetic field becomes larger.     

加权微分建模的初步研究

加权建模是必要的,微分建模是重要的,把二者结合起来,进行加权微分建模既必要也重要.给出了常用模型的微分建模结果,讨论了加权建模中的计算和权重选择问题,探讨了加权微分建模的思路和方法,并结合典型数据验证了该方法的有效性和稳定性.象加权建模一样,加权微分建模的精度、实用价值等,是和权重确定得合理与否紧密相联;应先进行模拟,以与近期实际值或典型样本相差最小的参数所对应的模型为准.     

电磁学黑匣子实验的设计与解答Ⅱ--奥林匹克物理竞赛培训试题二

介绍了一个电磁学黑匣子实验，对其作了具体的解答，并提供多种解决方案，且指出了此题的特点和实验过程中可能出现的问题．     

体效应振荡器特性观测与使用实验教学研究

探讨了体效应振荡器特性观测与使用实验中，编写实验原理要应用能带结构解释负阻特性并通过对偶极畴生长和运动过程的描述说明振荡原理，提出了实验教学方案，从教学效果上分析了开设此实验的意义及合理性。     

Theoretical Studies on the Si（001）-SiO2 Interface Structure

1 INTRODUCTION Silicon and its alloy have been widely applied in such fields as electronic industry, high-temperature structural ceramics, etc. In addition, the researches on silicon and its relevant materials greatly promote the rapid development of modern optics and infor- mation technology. Therefore, more and more at- tention is focused on the structure of silicon, oxide of silicon and the interfaces between silicon and metal or nonmetal. As an ideal passive film on the Si surface, S…     

电信运营市场上过度进入的供给分析

本文在分析光纤主干网和本地接入服务市场上电信运营商的供给行为的基础上,首先证明了拥有主干网的运营商愿意租出自己的部分光纤,接着分析证明了上述两市场上使投资更倾向于过度的乘数效应,并进一步证明网络外部性使乘数效应更加明显.旨在对我国电信运营市场发展给出一些参考意见.